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NSF040120D7A0J
Silicon Carbide MOSFET, Single, N Channel, 65 A, 1.2 kV, 0.031 ohm, TO-263
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800 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | €15.110 |
| 50+ | €14.090 |
| 100+ | €13.070 |
| 250+ | €12.670 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
€156.10 (ex VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNSF040120D7A0J
Order Code4416137RL
Technical Datasheet
Continuous Drain Current Id65A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.031ohm
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.9V
Power Dissipation306W
Operating Temperature Max175°C
SVHCLead (21-Jan-2025)
Technical Specifications
Continuous Drain Current Id
65A
Drain Source On State Resistance
0.031ohm
Rds(on) Test Voltage
18V
Power Dissipation
306W
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
1.2kV
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001504
Product traceability
WEEE Code:0000