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NSF040120D7A0J
Silicon Carbide MOSFET, Single, N Channel, 65 A, 1.2 kV, 0.031 ohm, TO-263
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €17.150 |
| 5+ | €16.130 |
| 10+ | €15.110 |
| 50+ | €14.090 |
| 100+ | €13.070 |
| 250+ | €12.670 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNSF040120D7A0J
Order Code4416137
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id65A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.031ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.9V
Power Dissipation306W
Operating Temperature Max175°C
Product Range-
SVHCLead (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
65A
Drain Source On State Resistance
0.031ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
306W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001504
Product traceability
WEEE Code:0000