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SI3425DV-T1-GE3
Power MOSFET, P Channel, 20 V, 8 A, 0.028 ohm, TSOP, Surface Mount
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6,000 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.151 |
| 500+ | €0.118 |
| 1000+ | €0.0997 |
| 5000+ | €0.0861 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€20.10 (ex VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3425DV-T1-GE3
Order Code4644737RL
Technical Datasheet
Drain Source Voltage Vds20V
Continuous Drain Current Id8A
Drain Source On State Resistance0.028ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation3W
No. of Pins6Pins
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.028ohm
Gate Source Threshold Voltage Max
1.5V
No. of Pins
6Pins
Continuous Drain Current Id
8A
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability
WEEE Code:0000