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SI2319CDS-T1-BE3
MOSFET, P-CH, 40V, 4.4A, SOT-23
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ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-BE3
Order Code3703482
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-BE3
Order Code3703482
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.064ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.064ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET Series
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000042
WEEE Code:0000