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SI2122DS-T1-BE3
Power MOSFET, N Channel, 100 V, 2.17 A, 0.16 ohm, SOT-23, Surface Mount
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5,800 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.156 |
| 500+ | €0.131 |
| 1000+ | €0.111 |
| 5000+ | €0.0946 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€20.60 (ex VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2122DS-T1-BE3
Order Code4644730RL
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id2.17A
Drain Source On State Resistance0.16ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.16ohm
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
2.17A
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability
WEEE Code:0000