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Product Information
ManufacturerVISHAY
Manufacturer Part NoMXP120A080FW-GE3
Order Code4561974
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id29A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247AD
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max-
Power Dissipation139W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
MXP120A080FW-GE3 is a MaxSiC™ 1200V N-channel SiC MOSFET in a TO-247 package. Typical applications charger, auxiliary motor drive and DC/DC converter.
- Fast switching speed
- Short circuit withstand time 3μs
- 80mohm drain source on state resistance at VGS=20V
- 29A continuous drain current
- 139W power dissipation
- Operating junction temperature range from -55 to 150°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
29A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
-
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247AD
Rds(on) Test Voltage
20V
Power Dissipation
139W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
WEEE Code:0000