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BPW16N
Phototransistor, 825 nm, 40 °, 100 mW, 2 Pins, T-3/4 (1.8mm)
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| Quantity | Price (inc VAT) |
|---|---|
| 1+ | €0.798 (€0.9815) |
| 10+ | €0.553 (€0.6802) |
| 25+ | €0.504 (€0.6199) |
| 50+ | €0.455 (€0.5596) |
| 100+ | €0.406 (€0.4994) |
| 500+ | €0.339 (€0.417) |
Price for:Each
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Multiple: 1
€0.80 (€0.98 inc VAT)
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Product Overview
The BPW16N is a Silicon NPN Phototransistor with high radiant sensitivity in clear, plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54mm pitch. It is suitable for detector in electronic control and drive circuits.
- Leaded package
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response time
- ϕ = ±40° Angle of half sensitivity
Applications
Sensing & Instrumentation, Automation & Process Control
Technical Specifications
Wavelength Typ
825nm
Power Consumption
100mW
Transistor Case Style
T-3/4 (1.8mm)
Automotive Qualification Standard
-
Viewing Angle
40°
No. of Pins
2Pins
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability
WEEE Code:9900