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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJD127T4
Order Code1703977
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
DC Collector Current8A
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE100hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The MJD127T4 is a PNP complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Low collector-emitter saturation voltage
- Integrated anti-parallel collector-emitter diode
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
100hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
8A
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for MJD127T4
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00045
Product traceability
WEEE Code:0000