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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDX33C
Order Code9946489
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd70W
DC Collector Current10A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications.
- Complement to BDX34C
- 0.25A Base current
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
70W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BDX33C
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
WEEE Code:9900