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SCT4062KWAHRTL
Silicon Carbide MOSFET, Single, N Channel, 24 A, 1.2 kV, 0.062 ohm, TO-263
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991 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €10.250 |
| 5+ | €9.520 |
| 10+ | €8.790 |
| 50+ | €8.330 |
| 100+ | €7.320 |
| 250+ | €7.080 |
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Multiple: 1
€10.25 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT4062KWAHRTL
Order Code4246791
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.062ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.8V
Power Dissipation93W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.062ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
93W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
WEEE Code:0000