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RD3N06BATTL1
Power MOSFET, P Channel, 80 V, 60 A, 0.026 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (inc VAT) |
|---|---|
| 100+ | €1.380 (€1.6974) |
| 500+ | €1.160 (€1.4268) |
| 1000+ | €1.000 (€1.230) |
| 5000+ | €0.980 (€1.2054) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€143.00 (€174.74 inc VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerROHM
Manufacturer Part NoRD3N06BATTL1
Order Code4633496RL
Technical Datasheet
Drain Source Voltage Vds80V
Continuous Drain Current Id60A
Drain Source On State Resistance0.026ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation101W
No. of Pins3Pins
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.026ohm
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Continuous Drain Current Id
60A
Rds(on) Test Voltage
10V
Power Dissipation
101W
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability
WEEE Code:0000