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Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB40N120S3WG
Order Code2723793
Technical Datasheet
Continuous Collector Current160A
Collector Emitter Saturation Voltage1.7V
Power Dissipation454W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The NGTB40N120S3WG features a robust and cost effective Ultra Field Stop trench construction that provides superior performance in demanding switching applications, offering low switching losses. This IGBT is well suited to applications requiring fast switching with low forward voltage diodes, such as phase-shifted full bridge configurations. Built in free wheeling diode with a low forward voiltage.
- Extremely efficient trench with Field Stop Technology
- 175°C max operating temperature
- Optimised for high speed siwtching
- Low forward voltage reverse diode
Applications
Power Supplies, Motor Drive & Control
Technical Specifications
Continuous Collector Current
160A
Power Dissipation
454W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002
Product traceability
WEEE Code:0000