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MJE5730G
Bipolar (BJT) Single Transistor, PNP, 300 V, 1 A, 40 W, TO-220, Through Hole
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| Quantity | Price (ex VAT) |
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| 1+ | €1.850 |
| 10+ | €0.771 |
| 100+ | €0.681 |
| 500+ | €0.571 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE5730G
Order Code2845312
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max300V
Continuous Collector Current1A
Power Dissipation40W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency10MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
1A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
300V
Power Dissipation
40W
Transistor Mounting
Through Hole
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041
Product traceability
WEEE Code:0000