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100 In Stock
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Quantity | Price (ex VAT) |
---|---|
1+ | €12.360 |
5+ | €10.620 |
10+ | €8.880 |
50+ | €8.670 |
100+ | €8.120 |
250+ | €7.910 |
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€12.36 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11032G
Order Code1611191
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd300W
DC Collector Current50A
RF Transistor CaseTO-204
No. of Pins2Pins
DC Current Gain hFE400hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications.
- High DC current gain
- Monolithic construction with built-in base-emitter shunt resistor
Applications
Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
300W
RF Transistor Case
TO-204
DC Current Gain hFE
400hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
50A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.013835
Product traceability
WEEE Code:0000