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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD681G.
Order Code9557709
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd40W
DC Collector Current4A
RF Transistor CaseTO-225
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The BD681G is a NPN bipolar medium-power Darlington Transistor for use as output device in complementary general-purpose amplifier applications.
- Monolithic construction
- Complementary with BD682
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
40W
RF Transistor Case
TO-225
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
4A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for BD681G.
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00064
Product traceability
WEEE Code:9900