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| Quantity | Price (inc VAT) |
|---|---|
| 1+ | €0.625 (€0.7688) |
| 10+ | €0.360 (€0.4428) |
| 25+ | €0.340 (€0.4182) |
| 50+ | €0.321 (€0.3948) |
| 100+ | €0.301 (€0.3702) |
| 500+ | €0.248 (€0.305) |
Price for:Each
Minimum: 1
Multiple: 1
€0.62 (€0.77 inc VAT)
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Product Overview
The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.
- Minimum current transfer ratio of 100% at IF=10A, Vce=10V
- Isolation voltage of 4.17KVAC
- Forward current (If) of 60mA
- Single channel
- UL 1577 and DIN-EN IEC60747-5-5 approved
- Operating temperature range from -40°C to 100°C
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (25-Jun-2025)
Optocoupler Case Style
DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002177
Product traceability
WEEE Code:9900