Print Page
SPB18P06PGATMA1
Power MOSFET, P Channel, 60 V, 18.7 A, 0.101 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPB18P06PGATMA1
Order Code2212884
Also Known AsSPB18P06P G, SP000102181
Technical Datasheet
4,992 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.260 |
| 10+ | €0.741 |
| 100+ | €0.567 |
| 500+ | €0.460 |
| 1000+ | €0.390 |
Price for:Each
Minimum: 1
Multiple: 1
€1.26 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPB18P06PGATMA1
Order Code2212884
Also Known AsSPB18P06P G, SP000102181
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18.7A
Drain Source On State Resistance0.101ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation81.1W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPB18P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
- Enhancement-mode
- Avalanche rated
- dV/dt Rated
- Halogen-free, Green device
- Qualified according to AEC-Q101
Applications
Power Management, Automotive, Consumer Electronics, Motor Drive & Control, Portable Devices, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18.7A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
81.1W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.101ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85044090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181
Product traceability
WEEE Code:0000