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IRF2807STRLPBF
Power MOSFET, N Channel, 75 V, 82 A, 0.013 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRF2807STRLPBF
Order Code4318764
Product RangeHEXFET Series
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF2807STRLPBF
Order Code4318764
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id82A
Drain Source On State Resistance0.013ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
82A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
SVHC
No SVHC (27-Jun-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002016
WEEE Code:0000