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IPP65R095C7XKSA1
Power MOSFET, N Channel, 650 V, 24 A, 0.084 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP65R095C7XKSA1
Order Code2726070
Product RangeCoolMOS C7
Also Known AsIPP65R095C7, SP001080122
Technical Datasheet
1,768 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €4.500 |
| 10+ | €3.670 |
| 100+ | €2.690 |
| 500+ | €2.270 |
| 1000+ | €2.120 |
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€4.50 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP65R095C7XKSA1
Order Code2726070
Product RangeCoolMOS C7
Also Known AsIPP65R095C7, SP001080122
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id24A
Drain Source On State Resistance0.084ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation128W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages for e.g. computing, server, telecom, UPS and solar.
- Increased MOSFET dv/dt ruggedness
- Better efficiency due to best in class FOM RDS(on) *Eoss and RDS(on)*Qg
- Best-in-class RDS(on)/package
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
24A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
128W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.084ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
-
Technical Docs (2)
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3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability
WEEE Code:0000