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IPD60R750E6ATMA1
Power MOSFET, N Channel, 600 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD60R750E6ATMA1
Order Code2764859
Product RangeCoolMOS E6
Also Known AsIPD60R750E6, SP001117728
Technical Datasheet
Packaging Options
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60R750E6ATMA1
Order Code2764859
Product RangeCoolMOS E6
Also Known AsIPD60R750E6, SP001117728
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id5.7A
Drain Source On State Resistance0.68ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation48W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS E6
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.7A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
48W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.68ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS E6
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
WEEE Code:0000