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IMTA65R060M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 37 A, 650 V, 0.055 ohm, LHSOF
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| Quantity | Price (inc VAT) |
|---|---|
| 10+ | €5.412 |
| 100+ | €4.8954 |
| 500+ | €4.3665 |
| 1000+ | €4.2804 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
€49.00 (€59.12 inc VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMTA65R060M2HXTMA1
Order Code4445611RL
Technical Datasheet
Continuous Drain Current Id37A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.055ohm
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation165W
Operating Temperature Max175°C
Technical Specifications
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.055ohm
Rds(on) Test Voltage
20V
Power Dissipation
165W
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003
Product traceability
WEEE Code:0000