Print Page
PSMN1R2-25YLC,115
Power MOSFET, N Channel, 25 V, 100 A, 0.00105 ohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
788 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.410 |
| 10+ | €0.712 |
| 100+ | €0.486 |
| 500+ | €0.427 |
| 1000+ | €0.410 |
| 5000+ | €0.397 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
€1.41 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R2-25YLC,115
Order Code1895402
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance0.00105ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.45V
Power Dissipation179W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The PSMN1R2-25YLC is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supplies, sync rectifier and domestic equipment applications.
- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra-low RDS (ON) and low parasitic inductance
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
179W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.00105ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.45V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for PSMN1R2-25YLC,115
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0008
Product traceability
WEEE Code:0000