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Quantity | Price (ex VAT) |
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1+ | €1.510 |
10+ | €1.170 |
100+ | €0.963 |
500+ | €0.834 |
1000+ | €0.760 |
5000+ | €0.756 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6668TRPBF
Order Code2579988
Product RangeHEXFET
Also Known AsSP001551178
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id55A
Drain Source On State Resistance0.015ohm
Transistor Case StyleDirectFET MZ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.9V
Power Dissipation89W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRF6668TRPBF
2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
DirectFET MZ
Rds(on) Test Voltage
10V
Power Dissipation
89W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.9V
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
WEEE Code:0000