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Quantity | Price (ex VAT) |
---|---|
1+ | €2.530 |
10+ | €2.230 |
100+ | €1.050 |
500+ | €0.910 |
1000+ | €0.889 |
Product Information
Product Overview
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Motor Drive & Control, Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
130A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
75V
0.0078ohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Alternatives for IRF1407PBF
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate