IPD25CN10NGATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.019 ohm, TO-252 (DPAK), Surface Mount
2,500 more incoming. You can reserve stock now
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.430 |
| 10+ | €0.964 |
| 100+ | €0.685 |
| 500+ | €0.541 |
| 1000+ | €0.484 |
| 5000+ | €0.440 |
Product Information
Product Overview
The IPD25CN10N G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
35A
TO-252 (DPAK)
10V
71W
175°C
-
No SVHC (21-Jan-2025)
100V
0.019ohm
Surface Mount
3V
3Pins
-
MSL 3 - 168 hours
Technical Docs (1)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate