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IMBG120R140M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK)
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ManufacturerINFINEON
Manufacturer Part NoIMBG120R140M1HXTMA1
Order Code3582465
Product RangeCoolSiC Trench Series
Also Known AsIMBG120R140M1H, SP004463792
Technical Datasheet
229 In Stock
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1-2 Working Days Delivery
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €5.140 |
| 10+ | €4.100 |
| 100+ | €3.350 |
| 500+ | €2.940 |
| 1000+ | €2.930 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
€5.14 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R140M1HXTMA1
Order Code3582465
Product RangeCoolSiC Trench Series
Also Known AsIMBG120R140M1H, SP004463792
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id18A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.189ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.7V
Power Dissipation107W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IMBG120R140M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical applications include drives, infrastructure – charger, energy generation solar string inverter and solar optimizer and industrial power supplies-industrial UPS.
- Very low switching losses
- Short circuit withstand time 3µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distance <gt/> 6.1mm
- Sense pin for optimized switching performance
- Efficiency improvement, enabling higher frequency and increased power density
- Cooling effort reduction and reduction of system complexity and cost
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.189ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
107W
Product Range
CoolSiC Trench Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001588
Product traceability
WEEE Code:0000