CoolSiC™ 650 V silicon carbide MOSFETs
Delivering reliable and cost-effective top performance
Megatrends like digitalization, urbanization, and electro mobility lead to increased power consumption, pushing energy efficiency into focus. Infineon responds by offering full system solutions from one source - building no longer only on its renowned silicon technology, but also on innovative wide-bandgap devices such as SiC-based CoolSiC™ MOSFETs.
Infineon’s CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide (SiC) such as the capability to operate at higher voltages, temperature and frequencies. By adding unique features Infineon manages to further increase the device performance. Applying Infineon’s superior TRENCH technology, the use of CoolSiC™ MOSFETs guarantees lowest losses in the application and the highest reliability in operation.
CoolSiC™ MOSFETs are suitable for high temperature and harsh operations. Resultingly, a simplified and cost-effective deployment of highest system efficiency in a broad range of applications is possible.
In-application benefits
UPS
Supports highest efficiency in 24/7 operation and cuts energy losses by 50%
Server power supply
OPEX savings by increased energy efficiency with up to 30% lower losses
Fast EV chargers
Electric vehicles being charged 2-times faster
Energy storage
Losses reduced by 50% for extra energy
Telecom power supply
Simplified design and fit for harsh 5G environments
Solar inverters
Doubling inverter power at the same inverter weight
NEW packaging variant: CoolSiC™ MOSFET 650V in D2PAK 7pin
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qrr
- Superior gate oxide reliability
- Tj,max=175°C and excellent thermal behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers (recommended driving voltage: 0V-18V)
- Kelvin source provides up to 4 times lower switching losses
CoolSiC MOSFETs 650V
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperatures and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Buy nowCoolSiC™ power MOSFETs
| Part Number | Specification | Package | Buy now |
|---|---|---|---|
| IMBG65R022M1H | CoolSiC™ 650 V, 22 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R030M1H | CoolSiC™ 650 V, 30 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R039M1H | CoolSiC™ 650 V, 39 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R048M1H | CoolSiC™ 650 V, 48 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R057M1H | CoolSiC™ 650 V, 57 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R072M1H | CoolSiC™ 650 V, 72 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R083M1H | CoolSiC™ 650 V, 83 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R107M1H | CoolSiC™ 650 V, 107 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R163M1H | CoolSiC™ 650 V, 163 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMBG65R260M1H | CoolSiC™ 650 V, 260 mΩ SiC-based trench MOSFET | TO-263-7 | Buy now |
| IMW65R048M1H | CoolSiC™ 650 V, 48 mΩ SiC-based trench MOSFET | TO-247-3 | Buy now |
| IMW65R027M1H | CoolSiC™ 650 V, 27 mΩ SiC-based trench MOSFET | TO-247-3 | Buy now |
| IMZA65R027M1H | CoolSiC™ 650 V, 27 mΩ SiC-based trench MOSFET | TO-247-4 | Buy now |
| IMZA65R048M1H | CoolSiC™ 650 V, 48 mΩ SiC-based trench MOSFET | TO-247-4 | Buy now |
| IMZA65R072M1H | CoolSiC™ 650 V, 72 mΩ SiC-based trench MOSFET | TO-247-4 | Buy now |
EiceDRIVER™ 1EDN TDI
Overcome ground-shift challenges in your design with Infineon’s single-channel non-isolated EiceDRIVER™ gate-driver ICs, which have truly differential inputs. Perfectly complements CoolSiC™ MOSFETs.
EiceDRIVER™ 2EDi
150mil 16-pin DSO The EiceDRIVER™ 2EDi, dual-channel isolated product family of gate driver ICs, is designed for robust operation in high performance CoolMOS™, CoolSiC™ and OptiMOS™ MOSFET half-bridges.
Gate driver ICs for CoolSiC™ MOSFETs
| Part Number | Specification | Package | Buy now |
|---|---|---|---|
| 2EDF9275F | Dual-channel gate driver IC with functional input-to-output isolation, UVLO 13 V | NB-DSO16 10mmx6mm | Buy now |
| 1EDB9275F | Single-channel isolated gate-driver IC with functional input-to-output isolation, UVLO 14.4V | PG-DSO 8 | Buy now |
| 1EDN7550B | Single-channel non-isolated gate-driver with truly differential inputs | SOT-23 | Buy now |
| 2EDS9265H | Dual-channel gate driver IC with reinforced input-to-output isolation, UVLO 13 V | WB-DSO16 10.3mmx10.3mm | Buy now |
EVAL_3K3W_TP_PFC_SIC
3300W CCM bidirectional totempole PFC unit using CoolSiC™ 650V , 600V CoolMOS™ C7 and digital control with XMC™
This evaluation board is a system solution for a bridgeless totem-pole power factor corrector (PFC) with bidirectional power capability. The EVAL_3K3W_TP_PFC_SIC evaluation board is addressing applications that require high efficiency (~99%) and high power density (72W/in3) such as high-end server and telecom. In addition, the bidirectional power flow capability allows this design to be used in battery chargers or battery formation applications.
Key features
- High efficiency bridgeless totem-pole PFC
- High power density
- Enabled by CoolSiC™ MOSFET 650V
- Digitally controlled with XMC1404
- Bidirectional capability (DC-AC operation)
Benefits
- Efficiency close to 99%
- Compact form factor (72W/in3)
- Low component count
- Bidirectional operation (digital control)
Potential applications
- Energy storage systems
- Battery formation
- Charging
- EV-charging
- eMobility
- Industrial power
- Power supply (SMPS)
- Robotics - automated guided vehicles
- Telecom
EVAL_3KW_50V_PSU
3 kW SMPS solution targeting the Open Compute V3 rectifier specifications
This design introduces a complete Infineon system solution for a 3 kW power supply unit (PSU) targeting the OCP V3 rectifier specifications for servers and data centers. The PSU comprises a front-end AC-DC bridgeless totem pole converter followed by a back-end DC-DC isolated half-bridge LLC converter. The front-end totem pole converter provides power factor correction (PFC) and total harmonic distortion (THD). The LLC converter provides safety isolation and a tightly regulated output voltage.
Key features
- Complete power supply targeting the Open Compute V3 rectifier specifications
- Very high peak efficiency
- Bridgeless totem-pole PFC with CoolSiC™
- Half-bridge LLC with CoolMOS™ and OptiMOS™
- Full digital control with XMCTM microcontrollers
Benefits
- Open Compute V3 rectifier (PSU) form factor (overall dimensions)
- 95 % peak of efficiency (fan not included) at 230VAC
- Very high efficiency combining CoolSiC™, CoolMOS™ and OptiMOS™
- 20ms hold-up time at full load
- EMC class B pre-compliance tested
Potential applications
- Servers and datacentres
