SiC solutions enabling radically new product designs with best system cost-performance ratio.
As the leading power supplier with 20 years of heritage in silicon carbide (SiC) technology development Infineon is prepared to cater to the need for smarter, more efficient energy generation, transmission, and consumption.
With Infineon’s extensive product portfolio, meeting the highest quality standards, long system lifetime and reliability are guaranteed. With CoolSiC™, customers will reach even the most stringent efficiency targets - while, at the same time, seeing a drop in operational system cost.
Infineon’s SiC technology – Key differentiators
• Unmatched reliability and quality
• System benefits
Gate oxide reliability – Setting a new benchmark
To further improve its SiC technology, Infineon invested a lot into testing on-state oxide reliability of electrically screened SiC MOSFETs and the off state oxide stress due to the electric field conditions in SiC power devices.
Today Infineon can claim:
- Due to the optimized gate oxide thickness our gate oxide screening is more efficient compared to competing SiC MOSFET manufacturers.
- Lower gate oxide failure rates during the lifetime and no early failures translate into the highest possible gate oxide quality at the customer side.
Body diode – An integral part
All CoolSiC™ MOSFETs – either packaged in Infineon’s SiC-modules or belonging to Infineon’s SiC-discrete portfolio - have an integrated body diode. An additional Schottky diode is not required. The diode is drift-free. It is mandatory to use synchronous rectification (turn on the channel in diode mode after a short dead time) to benefit from low conduction losses.
The CoolSiC™ MOSFET body diode is rated for hard commutation and is highly robust. It proves to be long-term stable and does not drift beyond the datasheet limits. The CoolSiC™ MOSFET trench concept is optimized for the operation of the body diode. The trench bottom embedded into a p+ region enhances the body diode area.
Make CoolSiC™ part of your application
Extensive and diversified portfolio
Infineon continuously added SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra-low to high-voltage power devices. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements.
CoolSiC™ MOSFETs – DISCRETES
|CoolSiC™ 650 V, 27 mΩ SiC-based trench MOSFET||TO-247-4|
|CoolSiC™ 650 V, 48 mΩ SiC-based trench MOSFET||TO-247-4|
|CoolSiC™ 650 V, 72 mΩ SiC-based trench MOSFET||TO-247-4|
|CoolSiC™ 1200 V, 90 mΩ SiC-based trench MOSFET||TO-247-3|
|CoolSiC™ 1200 V, 140 mΩ SiC-based trench MOSFET||TO247-4|
|CoolSiC™ 1700 V, 1000 mΩ SiC-based trench MOSFET||TO-263-7|
CoolSiC™ MOSFETs - MODULES
|EasyPACK™ 2B 1200 V, 15 mΩ 3-Level module with CoolSiC™ MOSFET, NTC temperature sensor and PressFIT Contact Technology||AG-EASY2BM|
|EasyPACK™ 2B 1200 V, 11 mΩ 3-Level module in Active NPC (ANPC) topology with CoolSiC™ MOSFET, NTC temperature sensor and PressFIT Contact Technology||AG-EASY2BM|
|EasyPACK™ 1B 1200 V, 45 mΩ sixpack module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology||AG-EASY1BM|
|EasyPACK™ 1B 1200 V, 23 mΩ fourpack module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology||AG-EASY1BM|
|62mm 1200 V, 2 mΩ half-bridge module with CoolSiC™ MOSFET||AG-62MM-1|
|62mm 1200 V, 3 mΩ half-bridge module with CoolSiC™ MOSFET||AG-62MM-1|
EiceDRIVER™ SiC MOSFET Gate Driver ICs
|dual-channel gate driver with reinforced input-to-output isolation, UVLO 13 V||WB-DSO16 10.3mm x 10.3mm|
|dual-channel gate driver with functional input-to-output isolation, UVLO 13 V||NB-DSO16 10mm x 6mm|
CoolSiC™ MOSFET – DISCRETE
|CoolSiC™ 1200 V, 45 mΩ SiC-based trench MOSFET, AEC-Q100/101 qualified||TO-247-3-41|
CoolSiC™ SCHOTTKY DIODES
|CoolSiC™ Schottky diode 650 V / 8 A, SiC-based Schottky barrier diode, AEC-Q100/101 qualified||D2PAK (TO263-2-1)|
|CoolSiC™ Schottky diode 650 V / 10 A, SiC-based Schottky barrier diode AEC-Q100/101 qualified||D2PAK (TO263-2-1)|
|CoolSiC™ Schottky diode 650 V / 12 A, SiC-based Schottky barrier diode, AEC-Q100/101 qualified||D2PAK (TO263-2-1)|
CoolSiC™ MOSFET – MODULE
|EasyDUAL™ 1B 1200 V, half-bridge module with CoolSiC™ Automotive MOSFET and PressFIT / NTC, AQG 324 qualified||AG-EASY1B|
|Part number||Description||Target applications||Key features and benefits|
Mother board: EVAL_PS_SIC_DP_MAIN
|EVAL_PS_SIC_DP_MAIN CoolSiC™ MOSFET 1200 V in TO-247 3-/4-pin evaluation platform (mother board) |
Solutions for solar energy systems, EV charging, UPS, power supplies, motor control and drives
Daughter board: REF_PS_SIC_DP1
|REF_PS_SIC_DP1 Miller clamp function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card)|
Daughter board: REF_PS_SIC_DP2
|REF_PS_SIC_DP2 Bipolar supply function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card)|
|CoolSiC™ MOSFET motor drives evaluation board (max 7.5 kW motor power output) feat. sixpack power module FS45MR12W1M1_B11 and EiceDRIVER™ 1200 V isolated gate driver 1EDI20H12AH|
|Motor control and drives|
|3300 W CCM bidirectional totem-pole PFC unit using CoolSiC™ 650 V, 600 V CoolMOS™ C7, and digital control via XMC™ microcontroller ||High-end server, datacenter, telecom|
Criteria for driver selection based on CoolSiC™ MOSFET characteristics
Gate driver circuits and ICs should support all the CoolSiC™ MOSFET characteristics (as per datasheet). Recommendable features include:
- Tight propagation delay matching
- Precise input filters
- Wide output-side supply range
- Negative gate voltage capability
- Extended CMTI capability
- Active Miller clamp
- DESAT protection
All the above has been taken into account by Infineon’s engineers to make the right driver selection as easy as possible for customers when opting for CoolSiC™.
CoolSiC™ MOSFETs can even be driven with a 0 V turn-off gate voltage what enables the simplest gate drive scheme among currently commercially available SiC MOSFETs. It simplifies the gate drive circuitry, helps to get rid of high-voltage isolation, while simultaneously, reducing the number of components. Notable are the MOSFETs’ high robustness and immunity against unwanted parasitic turn-on given the MOSFETs’ increased threshold voltage and optimized capacitance ratio.
Overcomplicating CoolSiC™ MOSFET driving is not necessary. In fact, no drain-source snubbers and no gate-source capacitor are needed.