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VISHAY  SIHP22N60E-GE3.  MOSFET, N CHANNEL, 600V, 21A, TO-220AB-3

VISHAY SIHP22N60E-GE3.
Technical Data Sheet (166.28KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
21A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
227W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

Product Traceability
RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002873