Low

PCA9306DCUT - 

Level Translator, Bidirectional, 1.5 ns, 1.2 V to 7 V, US8-8

TEXAS INSTRUMENTS PCA9306DCUT

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Manufacturer Part No:
PCA9306DCUT
Order Code:
1053573
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
-40°C
:
85°C
:
1.5ns
:
8Pins
:
-
:
-
:
1.2V
:
Cut Tape
:
7V
:
MSL 1 - Unlimited
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Product Overview

The PCA9306DCUTE4 is a dual bidirectional I²C and SMBus Voltage-level Translator with an enable (EN) input, is operational from 1.2 to 3.3V VREF1 and 1.8 to 5.5V VREF2. The PCA9306DCUTE4 allows bidirectional voltage translations between 1.2 and 5V, without the use of a direction pin. The low ON-state resistance (RON) of the switch allows connections to be made with minimal propagation delay. When EN is high, the translator switch is ON and the SCL1 and SDA1 I/O are connected to the SCL2 and SDA2 I/O, respectively, allowing bidirectional data flow between ports. When EN is low, the translator switch is off and a high-impedance state exists between ports. In addition to voltage translation, the PCA9306 can be used to isolate a 400kHz bus from a 100kHz by controlling the EN pin.
  • 2-bit Bidirectional translator for SDA and SCL lines in mixed-mode I²C applications
  • I²C and SMBus compatible
  • <1.5ns Maximum propagation delay to accommodate standard and fast-mode I²C devices/multiple masters
  • Provides bidirectional voltage translation with no direction pin
  • Low 3.5R ON-state connection between input and output ports provides less signal distortion
  • Open-drain I²C I/O ports (SCL1, SDA1, SCL2 and SDA2)
  • 5V Tolerant I²C I/O ports to support mixed-mode signal operation
  • High-impedance SCL1, SDA1, SCL2 and SDA2 pins for EN = low
  • Lock-up-free operation for isolation when EN = low
  • Flow-through pinout for ease of printed circuit board trace routing
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • Green product and no Sb/Br

Applications

Communications & Networking, Computers & Computer Peripherals, Industrial, Automation & Process Control

Warnings

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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