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INFINEON  SPB20N60C3ATMA1  Power MOSFET, N Channel, 20.7 A, 650 V, 190 mohm, 10 V, 3 V

INFINEON SPB20N60C3ATMA1
Technical Data Sheet (782.50KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SPB20N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
  • New revolutionary high voltage technology
  • Extreme dV/dt rated
  • High peak current capability
  • Qualified according to JEDEC for target applications
  • Improved transconductance
  • Low specific ON-state resistance
  • Very low energy storage in output capacitance (Eoss)@400V
  • Field proven CoolMOS™ quality
  • Periodic avalanche rated
  • High efficiency and power density
  • Outstanding performance
  • High reliability
  • Ease of use

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
20.7A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.19ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
208W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Communications & Networking;
  • Consumer Electronics;
  • Power Management

Also Known As

SPB20N60C3 , SP000013520

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products