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INFINEON  BSS131  MOSFET Transistor, N Channel, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V

INFINEON BSS131
Technical Data Sheet (439.36KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS131 from Infineon is surface mount, N channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. It is suitable for DC/DC, eMobility, motor control, onboard charger and telecom applications.
  • Automotive grade AEC-Q101 qualified
  • Drain to source voltage (Vds) of 240V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of 110mA
  • Power dissipation (pd) of 360mW
  • Operating temperature range -55°C to 150°C
  • Low on state resistance of 7.7ohm at Vgs 10V

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100mA
Drain Source Voltage Vds:
240V
On Resistance Rds(on):
7.7ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.4V
Power Dissipation Pd:
360mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Austria

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033

Associated Products