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INFINEON  BFP 420 H6327  Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE

INFINEON BFP 420 H6327
Technical Data Sheet (562.20KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BFP 420 H6327 is a 4.5V NPN Silicon RF Transistor for high gain low noise amplifiers. RF transistor provides the best possible performance and superior flexibility. RF transistor is widely used for new emerging wireless applications, where the system specification is not yet firmly established.
  • For oscillators up to 10GHz
  • Gold metallization for high reliability
  • 25GHz Transition frequency
  • SIEGET® 25GHz fT - Line
  • AEC-Q101 qualified
ESD sensitive device, take proper precaution while handling the device. Due to technical requirements, component may contain dangerous substances.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
4.5V
Transition Frequency ft:
25GHz
Power Dissipation Pd:
160mW
DC Collector Current:
35mA
DC Current Gain hFE:
95hFE
RF Transistor Case:
SOT-343
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Wireless;
  • RF Communications;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000307

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