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BROADCOM LIMITED  HSMS-2850-TR1G  RF Schottky Diode, Zero Bias, Single, 2 V, 1 mA, 250 mV, 0.3 pF, SOT-23

BROADCOM LIMITED HSMS-2850-TR1G
Technical Data Sheet (168.23KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The HSMS-2850-TR1G is a 3-pin single surface-mount zero bias Schottky Detector Diode has been designed and optimized for use in small signal (pin <-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF Tag applications where primary (DC bias) power is not available. The Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor.
  • High detection sensitivity
  • Low flicker noise
  • Low FIT (failure in time) rate
  • Better thermal conductivity for higher power dissipation
  • 175µA at 2V Maximum reverse leakage current
  • 8kR Typical video resistance
  • 500°C/W Thermal resistance
  • 150°C Junction temperature
ESD sensitive device, take proper precaution while handling the device.

Product Information

Diode Configuration:
Single
Reverse Voltage Vr:
2V
Forward Current If Max:
1mA
Forward Voltage VF Max:
250mV
Capacitance Ct:
0.3pF
Diode Case Style:
SOT-23
No. of Pins:
3 Pin
Packaging:
Cut Tape
Product Range:
HSMS Series
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Signal Processing

Legislation and Environmental

Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85411000
Weight (kg):
.000018

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