Low

BROADCOM LIMITED  HSMS-2802-TR1G  RF Schottky Diode, Barrier, Dual Series, 70 V, 1 A, 410 mV, 2 pF, SOT-23

BROADCOM LIMITED HSMS-2802-TR1G
Technical Data Sheet (386.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The HSMS-2802-TR1G is a 3-pin dual surface-mount RF Schottky Barrier Diode for both analogue and digital applications. The HSMS-280x family has the highest breakdown voltage, but at the expense of a high value of series resistance (Rs). In applications which do not require high voltage the HSMS-282x family, with a lower value of series resistance, will offer higher current carrying capacity and better performance.
  • High breakdown voltage
  • Low FIT (failure in time) rate
  • Six-sigma quality level
  • 35R Typical dynamic resistance
  • 500°C/W Thermal resistance
  • 150°C Junction temperature
ESD sensitive device, take proper precaution while handling the device.

Product Information

Diode Configuration:
Dual Series
Reverse Voltage Vr:
70V
Forward Current If Max:
1A
Forward Voltage VF Max:
410mV
Capacitance Ct:
2pF
Diode Case Style:
SOT-23
No. of Pins:
3 Pin
Packaging:
Cut Tape
Product Range:
HSMS Series
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • RF Communications

Legislation and Environmental

Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85411000
Weight (kg):
.000033

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.