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BROADCOM LIMITED  ATF-54143-TR1G  RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343

BROADCOM LIMITED ATF-54143-TR1G
Technical Data Sheet (212.63KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ATF-54143-TR1G is a low noise enhancement mode Pseudomorphic HEMT in a surface mount plastic package. The combination of high gain, high linearity and low noise makes the HFET ideal for cellular/PCS base stations.
  • Excellent uniformity in product specifications
  • 800 Micron gate width
  • Low noise figure
  • High linearity performance
  • Enhancement mode technology

Product Information

Drain Source Voltage Vds:
5V
Continuous Drain Current Id:
120mA
Power Dissipation Pd:
725mW
Operating Frequency Min:
450MHz
Operating Frequency Max:
6GHz
RF Transistor Case:
SOT-343
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

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